changes linearly and the tunnel current is exponentially dependent on this distance. This leads to an asymmetric, nonlinear current voltage response and is the origin of the rectification mechanism in MIM diodes. By introducing barrier asymmetry, the predominant effect is Fowler-Nordheim tunneling in the forward bias whilst at the same point the predominant effect is direct tunneling in the reverse bias. Two requirements are important to increment the antenna efficiency: the impedance of the diode, which must be close enough to the impedance of the antenna for maximum power transfer and resistor‐capacitor (RC) time constant must be low for operation at THz frequencies. Nowadays assuming that a small area is achievable with techniques of Atomic layer deposition (ALD) or photolithography, the diode resistance is high (~10 kΩ), and reduce the coupling efficiency to below a few percent. Principal investigator show their results.