must be several times smaller than 10-30 nm to have a noticeable effect on the electron movement. At zero bias, the distribution of carriers is random and scattered across the left and right side of the structure and no net current flow is observed. Upon applying a bias, carriers gain extra velocity in addition to their random thermal drift. Zhu et al. initially investigated metal (silver) as a material in [22], however problem as electromigration rendered this material inadequate. Graphene was suggested as a material for geometric diodes due to its large MFPL, which can be more than 1 micrometer [26, 27], and was demonstrated to work for rectification at 28 THz [22]. The capacitance of the graphene geometric diode was calculated to be 3.6 aF. The measured resistance of the graphene geometric diodes is approximately 1 kΩ. The RC time constant of the diodes will be about femtoseconds, corresponding to a cutoff frequency of 100 THz. Reducing