a) b)
Figure 16: Ideal band diagram for the MIIM diode under a) positive bias and b) increased positive bias.
Maraghechi et al [65] show that Cr/Al2O3/HfO2/Cr MIIM has a nonlinearity 10 times greater than to Cr/Al2O3/Cr and Cr/HfO2/Cr diodes. A more applicable example is by Grover & Moddel [66], who compared their W/Nb2O5/Ta2O5/W structure to an MIM Diode with equivalent barriers as that of a W/Nb2O5 on one side and a W/Ta2O5 on the other side, again clearly showing improved response from the MIIM device. The author A.D. P. Maraghechi et al reported the highest rectification parameters for MIIM devices based on Cr/Al2O3/HfO2/Cr are: asymmetry 10 to 3 V, and responsivity <2.5 A/W for the range of voltages 0.5–2.5 V [3]. A responsivity of 11 A/W at 0.02 V has been reported by author S. Grover et al from simulations on 4 nm resonant tunneling W/Nb2O5/Ta2O5/W. Ta2O5/Al2O3 MIIMs with dissimilar metal electrodes of work function difference of 0.6 eV, the highest reported low voltage (<0.8 V) asymmetry is 10. For bi-layer Ta2O5/Al2O3 and Nb2O5/Al2O3 nanostructures A.D. Weerakkody et al observed superior low voltage asymmetry (18 to 0.35 V), responsivity (9 A/W to 0.2 V), non-linearity of 7.5V-1 for Ta2O5/Al2O3 and Nb2O5/Al2O3 MIIM devices respectively, fabricated using Al metal electrodes. Diodes based on a new material set, Co/Co3O4/TiO2/Ti and an area of 0.071