Herein, we discuss a new hybrid waveguide design: amorphous silicon carbide (SiC) which can be deposited by plasma-enhanced chemical vapor deposition (PECVD) onto a LN film, and patterned into waveguides. Such a SiC film has a band gap of Eg,SiC = 2.18 eV and a refractive index in the range of 2.9-3.1 (see Section A.1 for more details). Recent works in hybrid LN waveguides have used Si (Eg,Si = 1.1 eV, nSi\(\approx\)3.5 \cite{Edwards_1980,si3n4,Chen_2014}) and SiN (Eg,SiN = 5.0, nSiN\(\approx\)\cite{si3n4a,Chang_2016,Jin_2016}). SiC has a wider band gap than Si, and a higher refractive index than both SiN and LN \cite{Edwards_1980}. A wider band gap material allows for nonlinear interactions below 1.1 \(\mu\)m (the band gap of Si), particularly in the visible regime; a higher refractive index than LN allows for a larger variety of hybrid waveguide designs, as well as the potential for high-density on-chip circuitry similar to what is possible with silicon photonics. SiC is also becoming available through foundry fabrication of devices at wafer-scale, potentially benefiting integrated optics using this material.