Figure 2. Structure of the
Si12Cm=0,2,4,6,8,10,12 nanocomposites. |
Figure 2. Structure of the
Si12Cm=0,2,4,6,8,10,12 nanocomposites. |
Figure 2. Structure of the
Si12Cm=0,2,4,6,8,10,12 nanocomposites. |
Figure 2. Structure of the
Si12Cm=0,2,4,6,8,10,12 nanocomposites. |
Figure 2. Structure of the
Si12Cm=0,2,4,6,8,10,12 nanocomposites. |
Figure 2. Structure of the
Si12Cm=0,2,4,6,8,10,12 nanocomposites. |
Figure 2. Structure of the
Si12Cm=0,2,4,6,8,10,12 nanocomposites. |
Figure 2. Structure of the
Si12Cm=0,2,4,6,8,10,12 nanocomposites. |
Figure 2. Structure of the
Si12Cm=0,2,4,6,8,10,12
nanocomposites. |
Table 1. Calculated binding energies (Ebind,
eV), energy values for the frontier molecular orbitals
(EHOMO and ELUMO, eV), band gaps (∆Е,
eV), volumes of the Si/C matrix (V, Ǻ3) and its
changing (∆V=VSi12Cm- VSi12, %) and
concentration of carbon atoms (C, %) of the Si/C nanoclusters |
Table 1. Calculated binding energies (Ebind,
eV), energy values for the frontier molecular orbitals
(EHOMO and ELUMO, eV), band gaps (∆Е,
eV), volumes of the Si/C matrix (V, Ǻ3) and its
changing (∆V=VSi12Cm- VSi12, %) and
concentration of carbon atoms (C, %) of the Si/C nanoclusters |
Table 1. Calculated binding energies (Ebind,
eV), energy values for the frontier molecular orbitals
(EHOMO and ELUMO, eV), band gaps (∆Е,
eV), volumes of the Si/C matrix (V, Ǻ3) and its
changing (∆V=VSi12Cm- VSi12, %) and
concentration of carbon atoms (C, %) of the Si/C nanoclusters |
Table 1. Calculated binding energies (Ebind,
eV), energy values for the frontier molecular orbitals
(EHOMO and ELUMO, eV), band gaps (∆Е,
eV), volumes of the Si/C matrix (V, Ǻ3) and its
changing (∆V=VSi12Cm- VSi12, %) and
concentration of carbon atoms (C, %) of the Si/C nanoclusters |
Table 1. Calculated binding energies (Ebind,
eV), energy values for the frontier molecular orbitals
(EHOMO and ELUMO, eV), band gaps (∆Е,
eV), volumes of the Si/C matrix (V, Ǻ3) and its
changing (∆V=VSi12Cm- VSi12, %) and
concentration of carbon atoms (C, %) of the Si/C nanoclusters |
Table 1. Calculated binding energies (Ebind,
eV), energy values for the frontier molecular orbitals
(EHOMO and ELUMO, eV), band gaps (∆Е,
eV), volumes of the Si/C matrix (V, Ǻ3) and its
changing (∆V=VSi12Cm- VSi12, %) and
concentration of carbon atoms (C, %) of the Si/C nanoclusters |
Table 1. Calculated binding energies (Ebind,
eV), energy values for the frontier molecular orbitals
(EHOMO and ELUMO, eV), band gaps (∆Е,
eV), volumes of the Si/C matrix (V, Ǻ3) and its
changing (∆V=VSi12Cm- VSi12, %) and
concentration of carbon atoms (C, %) of the Si/C nanoclusters |
Table 1. Calculated binding energies (Ebind,
eV), energy values for the frontier molecular orbitals
(EHOMO and ELUMO, eV), band gaps (∆Е,
eV), volumes of the Si/C matrix (V, Ǻ3) and its
changing (∆V=VSi12Cm- VSi12, %) and
concentration of carbon atoms (C, %) of the Si/C nanoclusters |
Table 1. Calculated binding energies (Ebind,
eV), energy values for the frontier molecular orbitals
(EHOMO and ELUMO, eV), band gaps (∆Е,
eV), volumes of the Si/C matrix (V, Ǻ3) and its
changing (∆V=VSi12Cm- VSi12, %) and
concentration of carbon atoms (C, %) of the Si/C
nanoclusters |