3D Modeling and Optimization of SiC Deposition from CH3SiCl3/H2 in a
Commercial Hot Wall Reactor
Abstract
In this paper, the 3D modeling and optimization of a commercial hot wall
vertical reactor for SiC coating is presented to investigate the effect
of various process parameters on the hydrodynamics stability of the CVD
reactor. The correlation between experimental and simulated results was
established by tuning the kinetic parameters for the surface reaction.
Besides, the incorporation of various dimensional numbers such as
Reynolds number (Re), Péclet number (Pe), and Grashof number (Gr)
enabled the systematic investigation of the effect of the natural
convection phenomena on film growth performance. It was found that the
buoyancy-driven flow can occur inside the reactor at high Reynolds
number and Gr/Re2 ratio. The process optimization was performed using
response surface methodology (RSM) to obtained desired film quality. The
CFD-RSM combined approach allowed a significant reduction in the number
of experiments and simulations required for the optimization of the CVD
process.