In the common DCMS, a reactive sputtering process of an oxide layer results in an electrical charging of the magnetron and thus leads to arcing. The PMS method pulses the sputtering power and in the off times, a charge of the magnetron can discharge again. The pulsed operation of the magnetron enables a consistent stable deposition process for oxide films. Figure 2 shows the magnetron voltage recorded during the pulsed magnetron sputtering process at a constant argon flow of 120.0 sccm. The addition of oxygen was linearly varied in each case over a five-minute period. In this case, the sputter power was 7.0 kW with a dc pulsed mode at 350 kHz and a switch-on time of 1.7 μs. The hysteresis behavior of the reactive sputtering process of titanium dioxide can be used to explain the effect of target poisoning. Figure 2 shows six states of target poisoning from a) to f) on a schematic cross-section of a target with the typical sputtering erosion.