Abstract

In this work, we attempt to find a suitable oxide resistive layer among four popular metal oxides, including HfOX, NiOX, TaOX, and TiOX for GE-based RRAM devices by investigating the device performance using a fully experimentally calibrated numerical simulation model. The results reveal that among four metal oxides, HfOX resistive layer with GE provides lower reset voltage (0.12 V), lower sneak current (81.07 nA) with better power efficiency (45.92%) for 2 8 bit capacity. On the other hand, NiOX-based RRAM shows a higher switching current (14.45 µA), more thermal stability, better uniform and distinguishable multilevel states, and higher readout margin for crossbar array size. Our study offers a comprehensive examination of the performance characteristics of distinct resistive layer materials that can provide an important guide to experimental efforts and trigger more efforts.